Temperature and time dependent threshold voltage characterization of AlGaN/GaN high electron mobility transistors
| Data(s) |
2011
|
|---|---|
| Resumo |
Relacionado con línea de investigación del GDS del ISOM ver http://www.isom.upm.es/dsemiconductores.php |
| Formato |
application/pdf |
| Identificador | |
| Idioma(s) |
spa |
| Publicador |
E.T.S.I. Telecomunicación (UPM) |
| Relação |
http://oa.upm.es/11895/1/INVE_MEM_2011_107715.pdf http://onlinelibrary.wiley.com/doi/10.1002/pssc.201001102/abstract info:eu-repo/semantics/altIdentifier/doi/DOI1002/pssc.201001102 |
| Direitos |
http://creativecommons.org/licenses/by-nc-nd/3.0/es/ info:eu-repo/semantics/restrictedAccess |
| Fonte |
Physica status solidi c, ISSN 1862-6351, 2011 |
| Palavras-Chave | #Sin determinar #Telecomunicaciones |
| Tipo |
info:eu-repo/semantics/article Artículo PeerReviewed |
