Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires
| Contribuinte(s) |
UNIVERSIDADE DE SÃO PAULO |
|---|---|
| Data(s) |
02/06/2014
02/06/2014
2013
01/07/2013
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| Resumo |
Time-resolved photoluminescence was employed to study electron-hole dynamics in radial heterostructured GaAs/AlGaAs/GaAs core/inner shell/outer shell nanowires. It was found that impurity random potential results in a red shift of the recombination time maximum with respect to the photoluminescence peak energy. FAPESP CNPq |
| Identificador |
Applied Physics Letters, AIP, College Park,v. 103, n. 3, p. 033121-1-033121-3, July 2013 0003-6951 http://www.producao.usp.br/handle/BDPI/45210 10.1063/1.4816288 |
| Idioma(s) |
eng |
| Publicador |
American Institute of Physics - AIP College Park |
| Relação |
Applied Physics Letters |
| Direitos |
restrictedAccess |
| Palavras-Chave | #NANOTECNOLOGIA #SEMICONDUTORES |
| Tipo |
article original article publishedVersion |
