Study of the vertical transport in p-doped superlattices based on group III-V semiconductors

The electrical conductivity σ has been calculated for p-doped GaAs/Al0.3Ga0.7As and cubic GaN/Al0.3Ga0.7N thin superlattices (SLs). The calculations are done within a self-consistent approach to the k → ⋅ p → theory by means of a full six-band Luttinger-Kohn Hamiltonian, together with the Poisson equation in a plane wave representation, including exchange correlation effects within the local density approximation. It was also assumed that transport in the SL occurs through extended minibands states for each carrier, and the conductivity is calculated at zero temperature and in low-field ohmic limits by the quasi-chemical Boltzmann kinetic equation. It was shown that the particular minibands structure of the p-doped SLs leads to a plateau-like behavior in the conductivity as a function of the donor concentration and/or the Fermi level energy. In addition, it is shown that the Coulomb and exchange-correlation effects play an important role in these systems, since they determine the bending potential.

The authors would like to acknowledge the Brazilian Agency CNPq, CTAção Tranversal/CNPq grant #577219/20081, Universal/CNPq grant #472.312/20090, CNPq grant #303880/20082, CAPES, FACEPE (grant no. 10771.05/08/APQ), and FAPESP, Brazilian funding agencies, for partially supporting this project.

The authors would like to acknowledge the Brazilian Agency CNPq, CT-Ação Tranversal/CNPq grant #577219/2008-1, Universal/CNPq grant #472.312/2009-0, CNPq grant #303880/2008-2, CAPES, FACEPE (grant no. 1077-1.05/08/APQ), and FAPESP, Brazilian funding agencies, for partially supporting this project.