Low cost ion implantation technique

We describe an approach to ion implantation in which the plasma and its electronics are held at ground potential and the ion beam is formed and injected energetically into a space held at high negative potential. The technique allows considerable savings both economically and technologically, rendering feasible ion implantation applications that might otherwise not be possible for many researchers and laboratories. Here, we describe the device and the results of tests demonstrating Nb implantation at 90 keV ion energy and dose about 2 x 10(16) cm(-2). (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768699]

Fundacao de Amparo a Pesquisa do Estado de Sao Paulo (FAPESP)

Fundacao de Amparo a Pesquisa do Estado de Sao Paulo (FAPESP)

Conselho Nacional de Desenvolvimento Cientifico e Tecnologico (CNPq), Brazil

Conselho Nacional de Desenvolvimento Cientifico e Tecnologico (CNPq), Brazil

Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division of the U.S. DOE [DE-AC02-05CH11231]

Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division of the U.S. DOE