The zero temperature coefficient in junctionless nanowire transistors
Contribuinte(s) |
UNIVERSIDADE DE SÃO PAULO |
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Data(s) |
06/11/2013
06/11/2013
2012
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Resumo |
This Letter presents an analysis of the zero temperature coefficient (ZTC) bias in junctionless nanowire transistors (JNTs). Unlike in previous works, which had shown that JNT did not present a ZTC point, this work shows that ZTC may occur in JNTs depending mainly on the series resistance of the devices and its dependence on the temperature. Experimental results of drain current, threshold voltage, and series resistance are presented for both long and short channel n and p-type devices. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4744965] FAPESP CAPES CNPq |
Identificador |
APPLIED PHYSICS LETTERS, MELVILLE, v. 101, n. 6, pp. 1-47, AUG, 2012 0003-6951 http://www.producao.usp.br/handle/BDPI/42399 10.1063/1.4744965 |
Idioma(s) |
eng |
Publicador |
AMER INST PHYSICS MELVILLE |
Relação |
APPLIED PHYSICS LETTERS |
Direitos |
restrictedAccess Copyright AMER INST PHYSICS |
Palavras-Chave | #PHYSICS, APPLIED |
Tipo |
article original article publishedVersion |