The zero temperature coefficient in junctionless nanowire transistors


Autoria(s): Doria, Renan Trevisoli; Doria, Rodrigo Trevisoli; Souza, Michelly de; Das, Samaresh; Ferain, Isabelle; Pavanello, Marcelo Antonio
Contribuinte(s)

UNIVERSIDADE DE SÃO PAULO

Data(s)

06/11/2013

06/11/2013

2012

Resumo

This Letter presents an analysis of the zero temperature coefficient (ZTC) bias in junctionless nanowire transistors (JNTs). Unlike in previous works, which had shown that JNT did not present a ZTC point, this work shows that ZTC may occur in JNTs depending mainly on the series resistance of the devices and its dependence on the temperature. Experimental results of drain current, threshold voltage, and series resistance are presented for both long and short channel n and p-type devices. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4744965]

FAPESP

CAPES

CNPq

Identificador

APPLIED PHYSICS LETTERS, MELVILLE, v. 101, n. 6, pp. 1-47, AUG, 2012

0003-6951

http://www.producao.usp.br/handle/BDPI/42399

10.1063/1.4744965

http://dx.doi.org/10.1063/1.4744965

Idioma(s)

eng

Publicador

AMER INST PHYSICS

MELVILLE

Relação

APPLIED PHYSICS LETTERS

Direitos

restrictedAccess

Copyright AMER INST PHYSICS

Palavras-Chave #PHYSICS, APPLIED
Tipo

article

original article

publishedVersion