In-plane mapping of buried InGaAs quantum rings and hybridization effects on the electronic structure
Contribuinte(s) |
UNIVERSIDADE DE SÃO PAULO |
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Data(s) |
05/11/2013
05/11/2013
2012
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Resumo |
This work reports the investigation on the structural differences between InAs quantum rings and their precursor quantum dots species as well as on the presence of piezoelectric fields and asymmetries in these nanostructures. The experimental results show significant reduction in the ring dimensions when the sizes of capped and uncapped ring and dot samples are compared. The iso-lattice parameter mapped by grazing-incidence x-ray diffraction has revealed the lateral extent of strained regions in the buried rings. A comparison between strain and composition of dot and ring structures allows inferring on how the ring formation and its final configuration may affect optical response parameters. Based on the experimental observations, a discussion has been introduced on the effective potential profile to emulate theoretically the ring-shape confinement. The effects of confinement and strain field modulation on electron and hole band structures are simulated by a multiband k.p calculation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4733964] CNPq CNPq FAPESP FAPESP CAPES CAPES National Science Foundation [DMR-0520550] National Science Foundation |
Identificador |
JOURNAL OF APPLIED PHYSICS, MELVILLE, v. 112, n. 1, supl., Part 3, pp. 971-977, 37073, 2012 0021-8979 http://www.producao.usp.br/handle/BDPI/41869 10.1063/1.4733964 |
Idioma(s) |
eng |
Publicador |
AMER INST PHYSICS MELVILLE |
Relação |
JOURNAL OF APPLIED PHYSICS |
Direitos |
restrictedAccess Copyright AMER INST PHYSICS |
Palavras-Chave | #EXCITON #STATES #DOTS #PHYSICS, APPLIED |
Tipo |
article original article publishedVersion |