Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field
| Contribuinte(s) |
UNIVERSIDADE DE SÃO PAULO |
|---|---|
| Data(s) |
21/10/2013
21/10/2013
2012
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| Resumo |
A metal-insulator transition in a two-dimensional semimetal based on HgTe quantum wells is discovered. The transition is induced by a magnetic field applied parallel to the plane of the quantum well. The threshold behavior of the activation energy as a function of the magnetic-field strength and an abrupt reduction of the Hall resistance at the onset of the transition suggest that the observed effect originates from the formation of an excitonic insulator. Russian Foundation for Basic Research [12-02-00054-a, 11-02-12142-ofi-m] Russian Foundation for Basic Research Russian Academy of Sciences Russian Academy of Sciences |
| Identificador |
JETP LETTERS, NEW YORK, v. 96, n. 4, supl. 6, Part 1, pp. 251-254, OCT, 2012 0021-3640 http://www.producao.usp.br/handle/BDPI/35199 10.1134/S0021364012160072 |
| Idioma(s) |
eng |
| Publicador |
MAIK NAUKA/INTERPERIODICA/SPRINGER NEW YORK |
| Relação |
JETP LETTERS |
| Direitos |
restrictedAccess Copyright MAIK NAUKA/INTERPERIODICA/SPRINGER |
| Palavras-Chave | #EXCITONIC INSULATOR #ELECTRON-SYSTEMS #HOLE SYSTEM #PHYSICS, MULTIDISCIPLINARY |
| Tipo |
article original article publishedVersion |
