Unconventional Hall effect near charge neutrality point in a two-dimensional electron-hole system


Autoria(s): Raichev, O. E.; Gusev, Gennady; Olshanetsky, E. B.; Kvon, Z. D.; Mikhailov, N. N.; Dvoretsky, S. A.; Portal, J. C.
Contribuinte(s)

UNIVERSIDADE DE SÃO PAULO

Data(s)

14/10/2013

14/10/2013

2012

Resumo

The transport properties of the two-dimensional system in HgTe-based quantum wells containing simultaneously electrons and holes of low densities are examined. The Hall resistance, as a function of perpendicular magnetic field, reveals an unconventional behavior, different from the classical N-shaped dependence typical for bipolar systems with electron-hole asymmetry. The quantum features of magnetotransport are explained by means of numerical calculation of the Landau level spectrum based on the Kane Hamiltonian. The origin of the quantum Hall plateau sigma(xy) = 0 near the charge neutrality point is attributed to special features of Landau quantization in our system.

FAPESP

FAPESP

CNPq

CNPq

RFBI

RFBI

RAS

RAS

RFBR [12-02-00054-a]

RFBR

Identificador

PHYSICAL REVIEW B, COLLEGE PK, v. 86, n. 15, supl. 1, Part 6, pp. E705-E709, OCT 26, 2012

1098-0121

http://www.producao.usp.br/handle/BDPI/35053

10.1103/PhysRevB.86.155320

http://dx.doi.org/10.1103/PhysRevB.86.155320

Idioma(s)

eng

Publicador

AMER PHYSICAL SOC

COLLEGE PK

Relação

PHYSICAL REVIEW B

Direitos

openAccess

Copyright AMER PHYSICAL SOC

Palavras-Chave #GRAPHENE #HETEROJUNCTIONS #PHYSICS, CONDENSED MATTER
Tipo

article

original article

publishedVersion