Compositional modulation and surface stability in InGaP films: Understanding and controlling surface properties


Autoria(s): Bortoleto, J. R R; Gutiérrez, H. R.; Cotta, M. A.; Bettini, J.
Contribuinte(s)

Universidade Estadual Paulista (UNESP)

Data(s)

27/05/2014

27/05/2014

08/04/2007

Resumo

We investigate the formation of compositional modulation and atomic ordering in InGaP films. Such bulk properties - as well as surface morphologies - present a strong dependence on growth parameters, mainly the V/III ratio. Our results indicate the importance of surface diffusion and, particularly, surface reconstruction for these processes. Most importantly from the application point of view, we show that the compositional modulation is not necessarily coupled to the surface instabilities, so that smooth InGaP films with periodic compositional variation could be obtained. This opens a new route for the generation of templates for quantum dot positioning and three-dimensional arrays of nanostructures. © 2007 American Institute of Physics.

Identificador

http://dx.doi.org/10.1063/1.2712159

Journal of Applied Physics, v. 101, n. 6, 2007.

0021-8979

http://hdl.handle.net/11449/69622

10.1063/1.2712159

2-s2.0-34047107716

2-s2.0-34047107716.pdf

Idioma(s)

eng

Relação

Journal of Applied Physics

Direitos

closedAccess

Palavras-Chave #Compositional modulation #Compositional variation #Surface stability #Nanostructures #Semiconducting indium compounds #Semiconductor quantum dots #Surface diffusion #Surface morphology #Surface properties #Surface reconstruction #Thin films
Tipo

info:eu-repo/semantics/article