Effect of spin-polarized subbands in the inhomogeneous hole gas providing the indirect exchange in GaMnAs bilayers


Autoria(s): Boselli, M. A.; Lima, ICD; Ghazali, A.
Contribuinte(s)

Universidade Estadual Paulista (UNESP)

Data(s)

20/05/2014

20/05/2014

01/05/2004

Resumo

The magnetic order resulting from the indirect exchange in the metallic phase of a (Ga,Mn)As/GaAs double layer structure is studied via Monte Carlo simulation. The polarization of the hole gas is taken into account, establishing a self-consistency between the magnetic order and the electronic structure. The Curie-Weiss temperatures calculated for these low-dimensional systems are in the range of 50-80 K, and the dependence of the transition temperature with the GaAs separation layer is established. (C) 2003 Published by Elsevier B.V.

Formato

351-352

Identificador

http://dx.doi.org/10.1016/j.jmmm.2003.11.383

Journal of Magnetism and Magnetic Materials. Amsterdam: Elsevier B.V., v. 272, p. 351-352, 2004.

0304-8853

http://hdl.handle.net/11449/39325

10.1016/j.jmmm.2003.11.383

WOS:000222236500155

Idioma(s)

eng

Publicador

Elsevier B.V.

Relação

Journal of Magnetism and Magnetic Materials

Direitos

closedAccess

Palavras-Chave #diluted magnetic semiconductor #(Ga,Mn)As #spintronics
Tipo

info:eu-repo/semantics/article