Effect of spin-polarized subbands in the inhomogeneous hole gas providing the indirect exchange in GaMnAs bilayers
| Contribuinte(s) |
Universidade Estadual Paulista (UNESP) |
|---|---|
| Data(s) |
20/05/2014
20/05/2014
01/05/2004
|
| Resumo |
The magnetic order resulting from the indirect exchange in the metallic phase of a (Ga,Mn)As/GaAs double layer structure is studied via Monte Carlo simulation. The polarization of the hole gas is taken into account, establishing a self-consistency between the magnetic order and the electronic structure. The Curie-Weiss temperatures calculated for these low-dimensional systems are in the range of 50-80 K, and the dependence of the transition temperature with the GaAs separation layer is established. (C) 2003 Published by Elsevier B.V. |
| Formato |
351-352 |
| Identificador |
http://dx.doi.org/10.1016/j.jmmm.2003.11.383 Journal of Magnetism and Magnetic Materials. Amsterdam: Elsevier B.V., v. 272, p. 351-352, 2004. 0304-8853 http://hdl.handle.net/11449/39325 10.1016/j.jmmm.2003.11.383 WOS:000222236500155 |
| Idioma(s) |
eng |
| Publicador |
Elsevier B.V. |
| Relação |
Journal of Magnetism and Magnetic Materials |
| Direitos |
closedAccess |
| Palavras-Chave | #diluted magnetic semiconductor #(Ga,Mn)As #spintronics |
| Tipo |
info:eu-repo/semantics/article |