Raman phonon modes of zinc blende InxGa1-xN alloy epitaxial layers
| Contribuinte(s) |
Universidade Estadual Paulista (UNESP) |
|---|---|
| Data(s) |
20/05/2014
20/05/2014
23/08/1999
|
| Resumo |
Transverse-optical (TO) and longitudinal-optical (LO) phonons of zinc blende InxGa1-xN (0 less than or equal to x less than or equal to 0.31) layers are observed through first-order micro-Raman scattering experiments. The samples are grown by molecular-beam epitaxy on GaAs (001) substrates, and x-ray diffraction measurements are performed to determine the epilayer alloy composition. Both the TO and LO phonons exhibit a one-mode-type behavior, and their frequencies display a linear dependence on the composition. The Raman data reported here are used to predict the A(1) (TO) and E-1 (TO) phonon frequencies of the hexagonal InxGa1-xN alloy. (C) 1999 American Institute of Physics. [S0003-6951(99)01234-6]. |
| Formato |
1095-1097 |
| Identificador |
http://dx.doi.org/10.1063/1.124608 Applied Physics Letters. Woodbury: Amer Inst Physics, v. 75, n. 8, p. 1095-1097, 1999. 0003-6951 http://hdl.handle.net/11449/39252 10.1063/1.124608 WOS:000082037500022 WOS000082037500022.pdf |
| Idioma(s) |
eng |
| Publicador |
American Institute of Physics (AIP) |
| Relação |
Applied Physics Letters |
| Direitos |
closedAccess |
| Tipo |
info:eu-repo/semantics/article |
