Dipole relaxation current in n-type AlxGa1-xAs

Autoria(s): Scalvi, Luis Vicente de Andrade; Oliveira, L.; Li, M. S.; Manasreh, M. O.; vonBardeleben, H. J.; Pomrenke, G. S.; Lannoo, M.; Talwar, D. N.
Contribuinte(s)

Universidade Estadual Paulista (UNESP)
Data(s)

20/05/2014

20/05/2014

01/01/1994
Formato

285-290
Identificador

Physics and Applications of Defects In Advanced Semiconductors. Pittsburgh: Materials Research Soc, v. 325, p. 285-290, 1994.

0272-9172

http://hdl.handle.net/11449/38104

WOS:A1994BA45Z00038
Idioma(s)

eng
Publicador

Materials Research Society
Relação

Physics and Applications of Defects In Advanced Semiconductors
Direitos

closedAccess
Tipo

info:eu-repo/semantics/conferencePaper
Acesso ao item digital