Thermal dependence of the zero-bias conductance through a nanostructure
| Contribuinte(s) |
Universidade Estadual Paulista (UNESP) |
|---|---|
| Data(s) |
30/09/2013
20/05/2014
30/09/2013
20/05/2014
01/06/2009
|
| Resumo |
Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) Processo FAPESP: 01/14974-0 Processo FAPESP: 04/08928-3 We show that the conductance of a quantum wire side-coupled to a quantum dot, with a gate potential favoring the formation of a dot magnetic moment, is a universal function of the temperature. Universality prevails even if the currents through the dot and the wire interfere. We apply this result to the experimental data of Sato et al. (Phys. Rev. Lett., 95 (2005) 066801). Copyright (C) EPLA, 2009 |
| Formato |
6 |
| Identificador |
http://dx.doi.org/10.1209/0295-5075/86/67006 Epl. Les Ulis Cedex A: Edp Sciences S A, v. 86, n. 6, p. 6, 2009. 0295-5075 http://hdl.handle.net/11449/25011 10.1209/0295-5075/86/67006 WOS:000269357700030 |
| Idioma(s) |
eng |
| Publicador |
Edp Sciences S A |
| Relação |
EPL |
| Direitos |
closedAccess |
| Tipo |
info:eu-repo/semantics/article |
