Direct Observation of Tetragonal Distortion in Epitaxial Structures through Secondary Peak Split in a Synchrotron Radiation Renninger Scan
Contribuinte(s) |
Universidade Estadual Paulista (UNESP) |
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Data(s) |
20/05/2014
20/05/2014
01/08/2010
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Resumo |
Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) Processo FAPESP: 07/08609-3 This paper reports a direct observation of an interesting split of the (022)(022) four-beam secondary peak into two (022) and (022) three-beam peaks, in a synchrotron radiation Renninger scan (phi-scan), as an evidence of the layer tetragonal distortion in two InGaP/GaAs (001) epitaxial structures with different thicknesses. The thickness, composition, (a perpendicular to) perpendicular lattice parameter, and (01) in-plane lattice parameter of the two epitaxial ternary layers were obtained from rocking curves (omega-scan) as well as from the simulation of the (022)(022) split, and then, it allowed for the determination of the perpendicular and parallel (in-plane) strains. Furthermore, (022)(022) omega:phi mappings were measured in order to exhibit the multiple diffraction condition of this four-beam case with their split measurement. |
Formato |
3436-3441 |
Identificador |
http://dx.doi.org/10.1021/cg100146x Crystal Growth & Design. Washington: Amer Chemical Soc, v. 10, n. 8, p. 3436-3441, 2010. 1528-7483 http://hdl.handle.net/11449/223 10.1021/cg100146x WOS:000280471700024 |
Idioma(s) |
eng |
Publicador |
Amer Chemical Soc |
Relação |
Crystal Growth & Design |
Direitos |
closedAccess |
Tipo |
info:eu-repo/semantics/article |