Dielectric screening in atomically thin boron nitride nanosheets
Data(s) |
01/01/2014
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Resumo |
Two-dimensional (2D) hexagonal boron nitride (BN) nanosheets are excellent dielectric substrate for graphene, molybdenum disulfide, and many other 2D nanomaterial-based electronic and photonic devices. To optimize the performance of these 2D devices, it is essential to understand the dielectric screening properties of BN nanosheets as a function of the thickness. Here, electric force microscopy along with theoretical calculations based on both state-of-the-art first-principles calculations with van der Waals interactions under consideration, and nonlinear Thomas-Fermi theory models are used to investigate the dielectric screening in high-quality BN nanosheets of different thicknesses. It is found that atomically thin BN nanosheets are less effective in electric field screening, but the screening capability of BN shows a relatively weak dependence on the layer thickness. |
Identificador | |
Idioma(s) |
eng |
Publicador |
American Chemical Society |
Relação |
http://dro.deakin.edu.au/eserv/DU:30069714/ying-dieletricscreen-2015.pdf http://www.dx.doi.org/10.1021/nl503411a |
Direitos |
2015, American Chemical Society |
Palavras-Chave | #boron nitride nanosheets #electric field screening #electric force microscopy (EFM) #first-principles calculations #nonlinear Thomas−Fermi theory #nonlinear Thomas-Fermi theory |
Tipo |
Journal Article |