Crystal phase engineered quantum wells in ZnO nanowires

Autoria(s): Khranovskyy, V.; Glushenkov, Alexey M.; Chen, Y.; Khalid, A.; Zhang, H.; Hultman, L.; Monemar, B.; Yakimova, R.
Data(s)

01/01/2013
Identificador

http://hdl.handle.net/10536/DRO/DU:30055284
Idioma(s)

eng
Publicador

Institute of Physics Publishing Ltd
Relação

http://dro.deakin.edu.au/eserv/DU:30055284/khranovsky-crystalphase-2013.pdf

http://doi.org/10.1088/0957-4484/24/21/215202
Palavras-Chave #Basal plane stacking faults #engineering approaches #luminescence mechanisms #material interfaces #photoluminescence properties #potential barriers #Type II band alignments #Zno nanowires (NWs)
Tipo

Journal Article
Acesso ao item digital