Evidence for electronic gap-driven metal-semiconductor transition in phase-change materials

Autoria(s): Shakhvorostov, Dmitry; Nistor, Razan A.; Krusin-Elbaum, Lia; Martyna, Glenn J.; Newns, Dennis M.; Elmegreen, Bruce G.; Liu, Xiao-hu; Hughes, Zak E.; Paul, Sujata; Cabral, Cyril; Raoux, Simone; Shrekenhamer, David B.; Basov, Dmitri N.; Song, Young; Müser, Martin
Data(s)

07/07/2009
Identificador

http://hdl.handle.net/10536/DRO/DU:30055059
Idioma(s)

eng
Publicador

National Academy of Sciences
Relação

http://dro.deakin.edu.au/eserv/DU:30055059/hughes-evidenceforelectronic-2009.pdf

http://dx.doi.org/10.1073/pnas.0812942106
Direitos

2009, National Academy of Sciences (NAS)
Palavras-Chave #Ab initio simulations #Ac conductivity #electronic phase transitions #structural phase change
Tipo

Journal Article
Acesso ao item digital