Design of electron band pass filters for electrically biased finite superlattices
Data(s) |
28/12/2009
28/12/2009
2004
|
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Resumo |
We design optimal band pass filters for electrons in semiconductor heterostructures, under a uniform applied electric field. The inner cells are chosen to provide a desired transmission window. The outer cells are then designed to transform purely incoming or outgoing waves into Bloch states of the inner cells. The transfer matrix is interpreted as a conformal mapping in the complex plane, which allows us to write constraints on the outer cell parameters, from which physically useful values can be obtained. |
Formato |
10 p. application/pdf |
Identificador |
0163-1829 http://hdl.handle.net/2445/10534 512021 |
Idioma(s) |
eng |
Publicador |
The American Physical Society |
Relação |
Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.69.115309 Physical Review B, 2003, vol. 69, núm. 11, p. 115309(1)-115309(10) |
Direitos |
(c) The American Physical Society, 2004 info:eu-repo/semantics/openAccess |
Palavras-Chave | #Semiconductors #Transport d'electrons #Semiconductors #Electron transport |
Tipo |
info:eu-repo/semantics/article |