Design of electron band pass filters for electrically biased finite superlattices


Autoria(s): Martorell Domenech, Juan; Sprung, Donald W. L.; Morozov, Gregory V.
Data(s)

28/12/2009

28/12/2009

2004

Resumo

We design optimal band pass filters for electrons in semiconductor heterostructures, under a uniform applied electric field. The inner cells are chosen to provide a desired transmission window. The outer cells are then designed to transform purely incoming or outgoing waves into Bloch states of the inner cells. The transfer matrix is interpreted as a conformal mapping in the complex plane, which allows us to write constraints on the outer cell parameters, from which physically useful values can be obtained.

Formato

10 p.

application/pdf

Identificador

0163-1829

http://hdl.handle.net/2445/10534

512021

Idioma(s)

eng

Publicador

The American Physical Society

Relação

Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.69.115309

Physical Review B, 2003, vol. 69, núm. 11, p. 115309(1)-115309(10)

Direitos

(c) The American Physical Society, 2004

info:eu-repo/semantics/openAccess

Palavras-Chave #Semiconductors #Transport d'electrons #Semiconductors #Electron transport
Tipo

info:eu-repo/semantics/article