HRTEM assessment of Wurtzite and Zinc-Blende phases in GaAs nanowires for optoelectronic devices


Autoria(s): Conesa Boj, Sònia
Contribuinte(s)

Peiró Martínez, Francisca

Arbiol i Cobos, Jordi

Data(s)

27/10/2009

27/10/2009

01/09/2008

Resumo

Màster en Nanociència i Nanotecnologia. Curs 2007-2008. Directors: Francesca Peiró i Martínez and Jordi Arbiol i Cobos

Semiconductor nanowires have recently attracted a lot of interest as potential building blocks for future electronic and optoelectronic nanodevices. In this work structural and optical properties of semiconductor nanowires are studied by means of high resolution transmission electron microscopy (HRTEM) and hotoluminescence (PL) analysis respectively. Several samples of GaAs nanowires grown under different As4 pressures are studied, and the presence of different optoelectronic properties are discussed in relation to the crystalline structures and defects found.

Formato

9 p.

application/pdf

Identificador

http://hdl.handle.net/2445/9822

Idioma(s)

eng

Direitos

cc-by-nc-nd (c) Conesa Boj, 2008

http://creativecommons.org/licenses/by-nc-nd/3.0/es/

info:eu-repo/semantics/openAccess

Palavras-Chave #Nanotecnologia #Semiconductors #Microscòpia electrònica de transmissió #Fotònica #Propietats òptiques #Tesis de màster #Nanotechnology #Semiconductors #Transmission electron microscopy #Photonics #Optical properties #Masters theses
Tipo

info:eu-repo/semantics/masterThesis