Chaos in resonant-tunneling superlattices
| Contribuinte(s) |
Universitat de Barcelona |
|---|---|
| Resumo |
Spatiotemporal chaos is predicted to occur in n-doped semiconductor superlattices with sequential resonant tunneling as their main charge transport mechanism. Under dc voltage bias, undamped time-dependent oscillations of the current (due to the motion and recycling of electric field domain walls) have been observed in recent experiments. Chaos is the result of forcing this natural oscillation by means of an appropriate external microwave signal. |
| Identificador | |
| Idioma(s) |
eng |
| Publicador |
The American Physical Society |
| Direitos |
(c) The American Physical Society, 1995 info:eu-repo/semantics/openAccess |
| Palavras-Chave | #Semiconductors #Dinàmica de fluids #Efecte túnel #Semiconductors #Fluid dynamics #Tunneling (Physics) |
| Tipo |
info:eu-repo/semantics/article |
