Defeitos superficiais em 2H-WS2 observados por microscopia de tunelamento


Autoria(s): Wypych,F.; Weber,Th.; Prins,R.
Data(s)

01/02/1998

Resumo

Scanning tunnelling microscopy (STM) was used to characterise the basal surface of fresh cleaved crystals of 2H-WS2. Although no impurity or stacking faults could be detected by X-ray diffraction, STM images obtained with negative bias voltage showed two kinds of defects. These defects were attributed to an iodine derivative used as transport agent. In a flat surface free of defects, an image with atomic resolution was achieved with sulphur distances and angles as expected for hexagonal symmetry of 2H-WS2.

Formato

text/html

Identificador

http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0100-40421998000100001

Idioma(s)

pt

Publicador

Sociedade Brasileira de Química

Fonte

Química Nova v.21 n.1 1998

Palavras-Chave #scanning tunnelling microscopy #tungsten disulphide #catalysis
Tipo

journal article