Defeitos superficiais em 2H-WS2 observados por microscopia de tunelamento
Data(s) |
01/02/1998
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Resumo |
Scanning tunnelling microscopy (STM) was used to characterise the basal surface of fresh cleaved crystals of 2H-WS2. Although no impurity or stacking faults could be detected by X-ray diffraction, STM images obtained with negative bias voltage showed two kinds of defects. These defects were attributed to an iodine derivative used as transport agent. In a flat surface free of defects, an image with atomic resolution was achieved with sulphur distances and angles as expected for hexagonal symmetry of 2H-WS2. |
Formato |
text/html |
Identificador |
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0100-40421998000100001 |
Idioma(s) |
pt |
Publicador |
Sociedade Brasileira de Química |
Fonte |
Química Nova v.21 n.1 1998 |
Palavras-Chave | #scanning tunnelling microscopy #tungsten disulphide #catalysis |
Tipo |
journal article |