Spatial mapping of exciton lifetimes in single ZnO nanowires


Autoria(s): Reparaz, J. S.; Callsen, G.; Wagner, M. R.; Güell Vilà, Frank; Morante i Lleonart, Joan Ramon; Sotomayor Torres, C. M.; Hoffmann, A.
Contribuinte(s)

Universitat de Barcelona

Resumo

We investigate the spatial dependence of the exciton lifetimes in single ZnO nanowires. We have found that the free exciton and bound exciton lifetimes exhibit a maximum at the center of nanowires, while they decrease by 30% towards the tips. This dependence is explained by considering the cavity-like properties of the nanowires in combination with the Purcell effect. We show that the lifetime of the bound-excitons scales with the localization energy to the power of 3/2, which validates the model of Rashba and Gurgenishvili at the nanoscale.

Identificador

http://hdl.handle.net/2445/52832

Idioma(s)

eng

Publicador

AIP Publishing

Direitos

cc-by (c) Reparaz, J. S. et al., 2013

info:eu-repo/semantics/openAccess

<a href="http://creativecommons.org/licenses/by/3.0/es">http://creativecommons.org/licenses/by/3.0/es</a>

Palavras-Chave #Nanoelectrònica #Semiconductors #Optoelectrònica #Òxid de zinc #Luminescència #Nanoelectronics #Semiconductors #Optoelectronics #Zinc oxide #Luminescence
Tipo

info:eu-repo/semantics/article

info:eu-repo/semantics/publishedVersion