Chemisorption of group-III metals on the Si(111) and Ge(111) surfaces: An ab initio study
Contribuinte(s) |
Universitat de Barcelona |
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Data(s) |
04/05/2010
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Resumo |
Chemisorption of group-III metal adatoms on Si(111) and Ge(111) has been studied through the ab initio Hartree-Fock method including nonempirical pseudopotentials and using cluster models to simulate the surface. Three different high-symmetry sites (atop, eclipsed, and open) have been considered by using X4H9, X4H7, and X6H9 (X=Si,Ge) cluster models. In a first step, ideal surface geometries have been used. Metal-induced reconstruction upon chemisorption has also been taken into account. Equilibrium distances, binding energies, and vibrational frequencies have been obtained and compared with available experimental data. From binding-energy considerations, the atop and eclipsed sites seem to be the most favorable ones and thus a coadsorption picture may be suggested. Group-III metals exhibit a similar behavior and the same is true for Si(111) and Ge(111) surfaces when chemisorption is considered. |
Identificador | |
Idioma(s) |
eng |
Publicador |
The American Physical Society |
Direitos |
(c) The American Physical Society, 1990 info:eu-repo/semantics/openAccess |
Palavras-Chave | #Química de superfícies #Absorció #Sòlids #Semiconductors #Teoria de l'aproximació #Surface chemistry #Absorption #Solids #Semiconductors #Approximation theory |
Tipo |
info:eu-repo/semantics/article |