Chemisorption of group-III metals on the Si(111) and Ge(111) surfaces: An ab initio study


Autoria(s): Ricart, J. M.; Rubio Martínez, Jaime; Illas i Riera, Francesc
Contribuinte(s)

Universitat de Barcelona

Data(s)

04/05/2010

Resumo

Chemisorption of group-III metal adatoms on Si(111) and Ge(111) has been studied through the ab initio Hartree-Fock method including nonempirical pseudopotentials and using cluster models to simulate the surface. Three different high-symmetry sites (atop, eclipsed, and open) have been considered by using X4H9, X4H7, and X6H9 (X=Si,Ge) cluster models. In a first step, ideal surface geometries have been used. Metal-induced reconstruction upon chemisorption has also been taken into account. Equilibrium distances, binding energies, and vibrational frequencies have been obtained and compared with available experimental data. From binding-energy considerations, the atop and eclipsed sites seem to be the most favorable ones and thus a coadsorption picture may be suggested. Group-III metals exhibit a similar behavior and the same is true for Si(111) and Ge(111) surfaces when chemisorption is considered.

Identificador

http://hdl.handle.net/2445/9771

Idioma(s)

eng

Publicador

The American Physical Society

Direitos

(c) The American Physical Society, 1990

info:eu-repo/semantics/openAccess

Palavras-Chave #Química de superfícies #Absorció #Sòlids #Semiconductors #Teoria de l'aproximació #Surface chemistry #Absorption #Solids #Semiconductors #Approximation theory
Tipo

info:eu-repo/semantics/article