Bound states of 3He at the edge of a 4He drop on a cesium surface


Autoria(s): Mayol Sánchez, Ricardo; Barranco Gómez, Manuel; Hernández, E. Susana; Pi Pericay, Martí; Guilleumas, Montserrat
Contribuinte(s)

Universitat de Barcelona

Data(s)

11/06/2010

Resumo

We show that small amounts of 3He atoms, added to a 4He drop deposited on a flat cesium surface at zero temperature, populate bound states localized at the contact line. These edge states show up for drops large enough to develop well defined surface and bulk regions together with a contact line, and they are structurally different from the well-known Andreev states that appear at the free surface and at the liquid-solid interface of films. We illustrate the one-body density of 3He in a drop with 1000 4He atoms, and show that for a sufficiently large number of impurities the density profiles spread beyond the edge, coating both the curved drop surface and its flat base and eventually isolating it from the substrate.

Identificador

http://hdl.handle.net/2445/12823

Idioma(s)

eng

Publicador

American Physical Society

Direitos

(c) American Physical Society, 2003

info:eu-repo/semantics/openAccess

Palavras-Chave #Teoria quantica #Cristal·lografia #Quantum theory #Crystallography
Tipo

info:eu-repo/semantics/article