Systematics of properties of the electron gas in deep-etched quantum wires
Contribuinte(s) |
Universitat de Barcelona |
---|---|
Data(s) |
04/05/2010
|
Resumo |
An efficient method is developed for an iterative solution of the Poisson and Schro¿dinger equations, which allows systematic studies of the properties of the electron gas in linear deep-etched quantum wires. A much simpler two-dimensional (2D) approximation is developed that accurately reproduces the results of the 3D calculations. A 2D Thomas-Fermi approximation is then derived, and shown to give a good account of average properties. Further, we prove that an analytic form due to Shikin et al. is a good approximation to the electron density given by the self-consistent methods. |
Identificador | |
Idioma(s) |
eng |
Publicador |
The American Physical Society |
Direitos |
(c) The American Physical Society, 1996 info:eu-repo/semantics/openAccess |
Palavras-Chave | #Superfícies (Física) #Semiconductors #Propietats elèctriques #Surfaces (Physics) #Semiconductors #Electric properties |
Tipo |
info:eu-repo/semantics/article |