Analysis of geometrical effects on the behavior of transverse and longitudinal modes of amorphous silicon compounds


Autoria(s): Moreno, J. A.; Garrido Fernández, Blas; Samitier i Martí, Josep; Morante i Lleonart, Joan Ramon
Contribuinte(s)

Universitat de Barcelona

Data(s)

02/05/2012

Identificador

http://hdl.handle.net/2445/24762

Idioma(s)

eng

Publicador

American Institute of Physics

Direitos

(c) American Institute of Physics, 1997

info:eu-repo/semantics/openAccess

Palavras-Chave #Espectroscòpia #Compostos de silici #Spectrum analysis #Silicon compounds
Tipo

info:eu-repo/semantics/article