Energy transfer mechanism and Auger effect in Er3+ coupled silicon nanoparticle samples


Autoria(s): Pitanti, Alessandro; Navarro Urrios, Daniel; Prtljaga, Nikola; Daldosso, Nicola; Gourbilleau, F.; Rizk, Richard; Garrido Fernández, Blas; Pavesi, Lorenzo
Contribuinte(s)

Universitat de Barcelona

Data(s)

14/02/2011

Resumo

We report a spectroscopic study about the energy transfer mechanism among silicon nanoparticles (Si-np), both amorphous and crystalline, and Er ions in a silicon dioxide matrix. From infrared spectroscopic analysis, we have determined that the physics of the transfer mechanism does not depend on the Si-np nature, finding a fast (< 200 ns) energy transfer in both cases, while the amorphous nanoclusters reveal a larger transfer efficiency than the nanocrystals. Moreover, the detailed spectroscopic results in the visible range here reported are essential to understand the physics behind the sensitization effect, whose knowledge assumes a crucial role to enhance the transfer rate and possibly employing the material in optical amplifier devices. Joining the experimental data, performed with pulsed and continuous-wave excitation, we develop a model in which the internal intraband recombination within Si-np is competitive with the transfer process via an Auger electron"recycling" effect. Posing a different light on some detrimental mechanism such as Auger processes, our findings clearly recast the role of Si-np in the sensitization scheme, where they are able to excite very efficiently ions in close proximity to their surface. (C) 2010 American Institute of Physics.

Identificador

http://hdl.handle.net/2445/15724

Idioma(s)

eng

Publicador

American Institute of Physics

Direitos

(c) American Institute of Physics, 2010

info:eu-repo/semantics/openAccess

Palavras-Chave #Semiconductors #Nanopartícules #Semiconductors #Nanoparticles
Tipo

info:eu-repo/semantics/article

info:eu-repo/semantics/publishedVersion