Characterization of the EL2 center in GaAs by optical admittance spectroscopy


Autoria(s): Dueñas Carazo, Salvador; Castán Lanaspa, María Elena; Dios, Agustín de; Bailón Vega, Luis A.; Barbolla Sancho, Juan; Pérez Rodríguez, Alejandro
Contribuinte(s)

Universitat de Barcelona

Data(s)

30/04/2012

Identificador

http://hdl.handle.net/2445/24682

Idioma(s)

eng

Publicador

American Institute of Physics

Direitos

(c) American Institute of Physics, 1990

info:eu-repo/semantics/openAccess

Palavras-Chave #Espectroscòpia #Òptica #Optics #Spectrum analysis
Tipo

info:eu-repo/semantics/article