Characterization of the EL2 center in GaAs by optical admittance spectroscopy
| Contribuinte(s) |
Universitat de Barcelona |
|---|---|
| Data(s) |
30/04/2012
|
| Identificador | |
| Idioma(s) |
eng |
| Publicador |
American Institute of Physics |
| Direitos |
(c) American Institute of Physics, 1990 info:eu-repo/semantics/openAccess |
| Palavras-Chave | #Espectroscòpia #Òptica #Optics #Spectrum analysis |
| Tipo |
info:eu-repo/semantics/article |