Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy
| Data(s) |
07/11/2010
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|---|---|
| Resumo |
A series of InxAl1-xAs samples (0.51≪x≪0.55)coherently grown on InP was studied in order to measure the band-gap energy of the lattice matched composition. As the substrate is opaque to the relevant photon energies, a method is developed to calculate the optical absorption coefficient from the photoluminescence excitation spectra. The effect of strain on the band-gap energy has been taken into account. For x=0.532, at 14 K we have obtained Eg0=1549±6 meV |
| Identificador | |
| Idioma(s) |
eng |
| Publicador |
American Institute of Physics |
| Direitos |
Tots els drets reservats |
| Palavras-Chave | #Compostos d'alumini #Compostos d'indi #Fotoluminescència #Semiconductors #Aluminum compounds #Indium compounds #Photoluminescence |
| Tipo |
info:eu-repo/semantics/article |
