Piezoresistive response of ITO films deposited at room temperature by magnetron sputtering


Autoria(s): Rasia, Luiz Antonio; Mansano, Ronaldo Domingues; Damiani, Larissa Rodrigues; VIANA, C. E.
Contribuinte(s)

UNIVERSIDADE DE SÃO PAULO

Data(s)

18/10/2012

18/10/2012

2010

Resumo

Indium tin oxide (ITO) thin films have been deposited on (100) Si substrates by RF magnetron sputtering from a compact target (90% In(2)O(3)-10% SnO(2) in weight) with 6 in. in diameter. In order to perform electromechanical characterizations of these films, strain gauges were fabricated. An experimental set-up based on bending beam theory was developed to determine the longitudinal piezoresistive coefficient (pi(1)) of the strain gauges fabricated. It has been confirmed that electrical resistance of the strain gauges decreases with load increases which results a negative gauge factor. A model based on the activation energy was used to explain the origin of this negative signal. The influence of the temperature on piezoresistive properties of ITO films was also evaluated.

CNPq

CAPES

FAPESP

Identificador

JOURNAL OF MATERIALS SCIENCE, v.45, n.15, p.4224-4228, 2010

0022-2461

http://producao.usp.br/handle/BDPI/18792

10.1007/s10853-010-4517-1

http://dx.doi.org/10.1007/s10853-010-4517-1

Idioma(s)

eng

Publicador

SPRINGER

Relação

Journal of Materials Science

Direitos

restrictedAccess

Copyright SPRINGER

Palavras-Chave #OXIDE THIN-FILMS #OPTICAL-PROPERTIES #STRAIN-SENSOR #CARBON #OXYGEN #Materials Science, Multidisciplinary
Tipo

article

original article

publishedVersion