Piezoresistive response of ITO films deposited at room temperature by magnetron sputtering
Contribuinte(s) |
UNIVERSIDADE DE SÃO PAULO |
---|---|
Data(s) |
18/10/2012
18/10/2012
2010
|
Resumo |
Indium tin oxide (ITO) thin films have been deposited on (100) Si substrates by RF magnetron sputtering from a compact target (90% In(2)O(3)-10% SnO(2) in weight) with 6 in. in diameter. In order to perform electromechanical characterizations of these films, strain gauges were fabricated. An experimental set-up based on bending beam theory was developed to determine the longitudinal piezoresistive coefficient (pi(1)) of the strain gauges fabricated. It has been confirmed that electrical resistance of the strain gauges decreases with load increases which results a negative gauge factor. A model based on the activation energy was used to explain the origin of this negative signal. The influence of the temperature on piezoresistive properties of ITO films was also evaluated. CNPq CAPES FAPESP |
Identificador |
JOURNAL OF MATERIALS SCIENCE, v.45, n.15, p.4224-4228, 2010 0022-2461 http://producao.usp.br/handle/BDPI/18792 10.1007/s10853-010-4517-1 |
Idioma(s) |
eng |
Publicador |
SPRINGER |
Relação |
Journal of Materials Science |
Direitos |
restrictedAccess Copyright SPRINGER |
Palavras-Chave | #OXIDE THIN-FILMS #OPTICAL-PROPERTIES #STRAIN-SENSOR #CARBON #OXYGEN #Materials Science, Multidisciplinary |
Tipo |
article original article publishedVersion |