Study of reactive sputtering titanium oxide for metal-oxide-semiconductor capacitors


Autoria(s): Torres, Katia Franklin Albertin; Pereyra, Ines
Contribuinte(s)

UNIVERSIDADE DE SÃO PAULO

Data(s)

18/10/2012

18/10/2012

2009

Resumo

Metal oxide semiconductor (MOS) capacitors with titanium oxide (TiO(x)) dielectric layer, deposited with different oxygen partial pressure (30,35 and 40%) and annealed at 550, 750 and 1000 degrees C, were fabricated and characterized. Capacitance-voltage and current-voltage measurements were utilized to obtain, the effective dielectric constant, effective oxide thickness, leakage current density and interface quality. The obtained TiO(x) films present a dielectric constant varying from 40 to 170 and a leakage current density, for a gate voltage of - 1 V, as low as 1 nA/cm(2) for some of the structures, acceptable for MOS fabrication, indicating that this material is a viable high dielectric constant substitute for current ultra thin dielectric layers. (C) 2009 Elsevier B.V. All rights reserved.

FAPESP

CNPq

Identificador

THIN SOLID FILMS, v.517, n.16, p.4548-4554, 2009

0040-6090

http://producao.usp.br/handle/BDPI/18630

10.1016/j.tsf.2008.12.045

http://dx.doi.org/10.1016/j.tsf.2008.12.045

Idioma(s)

eng

Publicador

ELSEVIER SCIENCE SA

Relação

Thin Solid Films

Direitos

restrictedAccess

Copyright ELSEVIER SCIENCE SA

Palavras-Chave #High kappa dielectrics #Deposition process #Titanium oxide #Sputtering #Capacitors #X-ray diffraction #Electrical properties and measurements #Raman spectroscopy #TEMPERATURE PLASMA OXIDATION #CHEMICAL-VAPOR-DEPOSITION #GATE DIELECTRIC FILMS #ELECTRICAL-PROPERTIES #THIN-FILMS #LAYER THICKNESS #SILICON-OXIDE #TIO2 FILMS #NITROGEN #SI #Materials Science, Multidisciplinary #Materials Science, Coatings & Films #Physics, Applied #Physics, Condensed Matter
Tipo

article

original article

publishedVersion