Transport properties of single vacancies in nanotubes
| Contribuinte(s) |
UNIVERSIDADE DE SÃO PAULO |
|---|---|
| Data(s) |
18/04/2012
18/04/2012
2008
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| Resumo |
We present density of states and electronic transport calculations of single vacancies in carbon nanotubes. We confirm that the defect reconstructs into a pentagon and a nonagon, following the removal of a single carbon atom. This leads to the formation of a dangling bond. Finally, we demonstrate that care must be taken when calculating the density of states of impurities in one-dimensional systems in general. Traditional treatments of these systems using periodic boundary conditions leads to the formation of minigaps even in the limit of large unit cells. |
| Identificador |
PHYSICAL REVIEW B, v.77, n.15, 2008 1098-0121 http://producao.usp.br/handle/BDPI/16268 10.1103/PhysRevB.77.153406 |
| Idioma(s) |
eng |
| Publicador |
AMER PHYSICAL SOC |
| Relação |
Physical Review B |
| Direitos |
restrictedAccess Copyright AMER PHYSICAL SOC |
| Palavras-Chave | #WALLED CARBON NANOTUBES #QUANTUM CONDUCTANCE #DEFECTS #ELECTRON #SENSORS #GAS #Physics, Condensed Matter |
| Tipo |
article original article publishedVersion |