Mimicking nanoribbon behavior using a graphene layer on SiC


Autoria(s): Lima, Matheus Paes; Rocha, Alexandre Reily; Silva, Antonio Jose Roque da; Fazzio, Adalberto
Contribuinte(s)

UNIVERSIDADE DE SÃO PAULO

Data(s)

18/04/2012

18/04/2012

2010

Resumo

We propose a natural way to create quantum-confined regions in graphene in a system that allows large-scale device integration. We show, using first-principles calculations, that a single graphene layer on a trenched region of [000 (1) over bar] SiC mimics (i) the energy bands around the Fermi level and (ii) the magnetic properties of free-standing graphene nanoribbons. Depending on the trench direction, either zigzag or armchair nanoribbons are mimicked. This behavior occurs because a single graphene layer over a SiC surface loses the graphenelike properties, which are restored solely over the trenches, providing in this way a confined strip region.

FAPESP

CNPq

Identificador

PHYSICAL REVIEW B, v.82, n.15, 2010

1098-0121

http://producao.usp.br/handle/BDPI/16206

10.1103/PhysRevB.82.153402

http://dx.doi.org/10.1103/PhysRevB.82.153402

Idioma(s)

eng

Publicador

AMER PHYSICAL SOC

Relação

Physical Review B

Direitos

restrictedAccess

Copyright AMER PHYSICAL SOC

Palavras-Chave #FIELD-EFFECT TRANSISTORS #EPITAXIAL GRAPHENE #ELECTRON-GAS #SYSTEMS #Physics, Condensed Matter
Tipo

article

original article

publishedVersion