Mimicking nanoribbon behavior using a graphene layer on SiC
| Contribuinte(s) |
UNIVERSIDADE DE SÃO PAULO |
|---|---|
| Data(s) |
18/04/2012
18/04/2012
2010
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| Resumo |
We propose a natural way to create quantum-confined regions in graphene in a system that allows large-scale device integration. We show, using first-principles calculations, that a single graphene layer on a trenched region of [000 (1) over bar] SiC mimics (i) the energy bands around the Fermi level and (ii) the magnetic properties of free-standing graphene nanoribbons. Depending on the trench direction, either zigzag or armchair nanoribbons are mimicked. This behavior occurs because a single graphene layer over a SiC surface loses the graphenelike properties, which are restored solely over the trenches, providing in this way a confined strip region. FAPESP CNPq |
| Identificador |
PHYSICAL REVIEW B, v.82, n.15, 2010 1098-0121 http://producao.usp.br/handle/BDPI/16206 10.1103/PhysRevB.82.153402 |
| Idioma(s) |
eng |
| Publicador |
AMER PHYSICAL SOC |
| Relação |
Physical Review B |
| Direitos |
restrictedAccess Copyright AMER PHYSICAL SOC |
| Palavras-Chave | #FIELD-EFFECT TRANSISTORS #EPITAXIAL GRAPHENE #ELECTRON-GAS #SYSTEMS #Physics, Condensed Matter |
| Tipo |
article original article publishedVersion |