Multiple source quantum well model of porous silicon light emission
| Data(s) |
01/04/1996
|
|---|---|
| Resumo |
<p>Based on photoluminescence, Fourier transform infrared spectroscopy, and atomic force microscopy results, a new light emitting model for porous silicon (multiple source quantum well model) is proposed.</p> |
| Identificador |
http://www.scopus.com/inward/record.url?scp=0030127694&partnerID=8YFLogxK |
| Idioma(s) |
eng |
| Direitos |
info:eu-repo/semantics/restrictedAccess |
| Fonte |
Zhang , S L , Chen , Y , Jia , L , Li , J J , Huang , F M , Zhu , T , Wang , X , Liu , Z F , Cai , S M , Wong , S P & Wilson , I H 1996 , ' Multiple source quantum well model of porous silicon light emission ' Journal of the Electrochemical Society , vol 143 , no. 4 , pp. 1394-1398 . |
| Palavras-Chave | #/dk/atira/pure/subjectarea/asjc/1600/1603 #Electrochemistry #/dk/atira/pure/subjectarea/asjc/2500/2508 #Surfaces, Coatings and Films #/dk/atira/pure/subjectarea/asjc/3100/3110 #Surfaces and Interfaces |
| Tipo |
article |
