A Computational Approach for Simulating P-type Silicon Piezoresistor Using Four Point Bending Setup
| Data(s) |
2013
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| Resumo |
The piezoresistance effect is defined as change in resistance due to applied stress. Silicon has a relatively large piezoresistance effect which has been known since 1954. A four point bending setup is proposed and designed to analyze the piezoresistance effect in p-type silicon. This setup is used to apply uniform and uniaxial stress along the <110> crystal direction. The main aim of this work is to investigate the piezoresistive characteristic of p-type resistors as a function of doping concentrations using COMSOL Multiphysics. Simulation results are compared with experimental data. |
| Identificador | |
| Idioma(s) |
eng |
| Direitos |
info:eu-repo/semantics/restrictedAccess |
| Fonte |
Tan , T H , Mitchell , N , McNeill , D , Wadsworth , H & Strahan , S 2013 , ' A Computational Approach for Simulating P-type Silicon Piezoresistor Using Four Point Bending Setup ' Paper presented at Proceedings of 2013 COMSOL Conference , Rotterdam , Netherlands , 23/10/2015 - 25/10/2015 , . |
| Tipo |
conferenceObject |
