A Model to Understand the Oxygen Vacancy Formation in Zr-Doped CeO2:Electrostatic Interaction and Structural Relaxation


Autoria(s): Wang, Hai-Feng; Gong, Xue-Qing; Guo, Yang-Long; Guo, Yun; Lu, Guan Zhong; Hu, P.
Data(s)

11/06/2009

Resumo

<p>Using density functional theory with the inclusion of on-site Coulomb Correction, the O vacancy formation energies of CexZr1-xO2 solid solutions with a series of Ce/Zr ratios are calculated, and a model to understand the results is proposed. It consists of electrostatic and structural relaxation terms, and the latter is found to play a vital role in affecting the O vacancy formation energies. Using this model, several long-standing questions in the field, such as why ceria with 50% ZrO2 usually exhibit the best oxygen storage capacity, can be explained. Some implications of the new interpretation are also discussed.</p>

Identificador

http://pure.qub.ac.uk/portal/en/publications/a-model-to-understand-the-oxygen-vacancy-formation-in-zrdoped-ceo2(7bc47bb3-5a96-4d44-a5eb-74846c4b0ec5).html

http://dx.doi.org/10.1021/jp900942a

Idioma(s)

eng

Direitos

info:eu-repo/semantics/restrictedAccess

Fonte

Wang , H-F , Gong , X-Q , Guo , Y-L , Guo , Y , Lu , G Z & Hu , P 2009 , ' A Model to Understand the Oxygen Vacancy Formation in Zr-Doped CeO2 : Electrostatic Interaction and Structural Relaxation ' Journal of Physical Chemistry C , vol 113 , no. 23 , pp. 10229-10232 . DOI: 10.1021/jp900942a

Palavras-Chave #CEO2-ZRO2 SOLID-SOLUTIONS #LOW-INDEX SURFACES #ELECTRONIC-STRUCTURE #STORAGE CAPACITY #CERIA #REDUCTION #OXIDES #TRANSITION #CE1-XZRXO2 #SIMULATION
Tipo

article