On the optical properties of bismuth oxide thin films prepared by pulsed laser deposition
Data(s) |
01/02/2005
|
---|---|
Resumo |
The optical properties of bismuth oxide films prepared by pulsed laser deposition (PLD), absorption in the photon energy range 2.50-4.30 eV and optical functions (n, k, epsilon(1), and epsilon(2)) in the domain 3.20-6.50 eV, have been investigated. As-prepared films (d = 0.05-1.50 mum) are characterized by a mixture of polycrystalline and amorphous phases. The fundamental absorption edge is described by direct optical band-to-band transitions with energies 2.90 and 3.83 eV The dispersion of the optical functions provided values of 4.40-6.25 eV for electron energies of respective direct transitions. In the spectral range 400-1000 nm, bismuth oxide films show a normal dispersion, which can be interpreted in the frame of a single oscillator model. (C) 2004 Elsevier B.V. All rights reserved. |
Identificador | |
Idioma(s) |
eng |
Direitos |
info:eu-repo/semantics/restrictedAccess |
Fonte |
Visinoiu , A , Leontie , L , Caraman , M & Rusu , G I 2005 , ' On the optical properties of bismuth oxide thin films prepared by pulsed laser deposition ' Thin Solis Films , vol 473 , pp. 230 . DOI: 10.1016/j.tsf.2004.07.061 |
Tipo |
article |