Gaussian pulse mixing by stacked semiconductor layers
Data(s) |
07/07/2014
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Resumo |
<p>The nonlinear scattering of two Gaussian pulses with different central frequencies incident at slant angles on the periodic stack of binary semiconductor layers has been modelled in the self-consistent problem formulation taking into account the dynamics of charges. The effects of the pump pulse length and central frequencies, and the stack physical and geometrical parameters on the properties of the emitted combinatorial frequency waveforms are analysed and discussed.</p> |
Identificador | |
Idioma(s) |
eng |
Publicador |
Institute of Electrical and Electronics Engineers (IEEE) |
Direitos |
info:eu-repo/semantics/restrictedAccess |
Fonte |
Shramkova , O V & Schuchinsky , A G 2014 , Gaussian pulse mixing by stacked semiconductor layers . in Antennas and Propagation Society International Symposium (APSURSI), 2014 IEEE . Institute of Electrical and Electronics Engineers (IEEE) , pp. 1554-1555 , 2014 IEEE Antennas and Propagation Society International Symposium, APSURSI 2014 , Memphis , United States , 6-11 July . DOI: 10.1109/APS.2014.6905103 |
Tipo |
contributionToPeriodical |