Gaussian pulse mixing by stacked semiconductor layers


Autoria(s): Shramkova, O. V.; Schuchinsky, A. G.
Data(s)

07/07/2014

Resumo

<p>The nonlinear scattering of two Gaussian pulses with different central frequencies incident at slant angles on the periodic stack of binary semiconductor layers has been modelled in the self-consistent problem formulation taking into account the dynamics of charges. The effects of the pump pulse length and central frequencies, and the stack physical and geometrical parameters on the properties of the emitted combinatorial frequency waveforms are analysed and discussed.</p>

Identificador

http://pure.qub.ac.uk/portal/en/publications/gaussian-pulse-mixing-by-stacked-semiconductor-layers(e3f04956-d0b2-4b65-ae47-05555147b6bf).html

http://dx.doi.org/10.1109/APS.2014.6905103

Idioma(s)

eng

Publicador

Institute of Electrical and Electronics Engineers (IEEE)

Direitos

info:eu-repo/semantics/restrictedAccess

Fonte

Shramkova , O V & Schuchinsky , A G 2014 , Gaussian pulse mixing by stacked semiconductor layers . in Antennas and Propagation Society International Symposium (APSURSI), 2014 IEEE . Institute of Electrical and Electronics Engineers (IEEE) , pp. 1554-1555 , 2014 IEEE Antennas and Propagation Society International Symposium, APSURSI 2014 , Memphis , United States , 6-11 July . DOI: 10.1109/APS.2014.6905103

Tipo

contributionToPeriodical