Observation of an optical phonon band in situ in TiO electrochemistry:A possible indicator of strongly trapped intermediates in the O evolution reaction
Data(s) |
31/08/2001
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Resumo |
This Letter reports in situ Fourier transform infrared (FTIR) spectroscopic data on thermal TiO films fabricated by heating titanium plates in air at 475, 700 and 800 °C. The films were studied in the dark and under UV-irradiation in aqueous 0.1MNaClO in the presence and absence of 0.1 M Na(OOC) and at 10, 25 and 50 °C. The film fabricated at 800 °C showed a broad feature near 1580cm under UV-irradiation that was not observed in the dark, whilst the films fabricated at lower temperatures, 475 and 700 °C, showed no such feature. This feature appears to be associated with the accumulation of surface-mobile holes at the complex, porous film-electrolyte interface and the capacity of such holes to enhance the absorption cross-section of optical phonons characteristic of the rutile crystal form at and near the surface of the TiO/electrolyte interface. © 2001 Elsevier Science B.V. |
Identificador |
http://dx.doi.org/10.1016/S0009-2614(01)00833-8 http://www.scopus.com/inward/record.url?eid=2-s2.0-0041874941&partnerID=8YFLogxK |
Idioma(s) |
eng |
Direitos |
info:eu-repo/semantics/restrictedAccess |
Fonte |
Christensen , P A , Eameaim , J , Hamnett , A & Lin , W F 2001 , ' Observation of an optical phonon band in situ in TiO electrochemistry : A possible indicator of strongly trapped intermediates in the O evolution reaction ' Chemical Physics Letters , vol 344 , no. 5-6 , pp. 488-494 . DOI: 10.1016/S0009-2614(01)00833-8 |
Tipo |
article |