Improved magnetization in sputtered dysprosium thin films

<p>50nm thick nanogranular polycrystalline dysprosium thin films have been prepared via ultra-high vacuum DC sputtering on SiO2 and Si wafers. The maximum in-plane spontaneous magnetization at T = 4K was found to be µ₀M_S,4K^(C) = (3.28±0.26)T for samples deposited on wafers heated to 350°C with a Neel point of T_N^(C) = (173±2)K and a ferromagnetic transition at T_C^(C) = (80±2)K, measured via zero-field-cooled – field-cooled magnetization measurements, close to single-crystal values. The slightly reduced magnetization is explained in the light of a metastable face-centered cubic crystal phase which occurred at the seed interface and granularity related effects, that are still noticeably influential despite an in-plane magnetic easy axis. As deposited samples showed reduced magnetization of µ₀M_S,4K^(A) = (2.26±0.18)T, however their ferromagnetic transition shifted to a much higher temperature of T_C^(A) = (172±2)K and the antiferromagnetic phase was completely suppressed probably as a result of strain.</p>