Control of Leakage Current in Polysilicon TFT´s by the Implantation of Boron

Autoria(s): Quinn, L.J.; Baine, Paul; Lee, Brian; Mitchell, Neil; Armstrong, Mervyn; Gamble, Harold
Data(s)

01/09/1998
Identificador

http://pure.qub.ac.uk/portal/en/publications/control-of-leakage-current-in-polysilicon-tfts-by-the-implantation-of-boron(e4152c39-25c2-41b9-a2ba-cf07b2f1c73b).html
Idioma(s)

eng
Direitos

info:eu-repo/semantics/restrictedAccess
Fonte

Quinn , L J , Baine , P , Lee , B , Mitchell , N , Armstrong , M & Gamble , H 1998 , ' Control of Leakage Current in Polysilicon TFT´s by the Implantation of Boron ' Paper presented at ESSDERC'98 , United Kingdom , 01/09/1998 , pp. 588-591 .
Tipo

conferenceObject
Acesso ao item digital