Optimisation and scaling of interfacial GeO2 layers for high-k gate stacks on germanium and extraction of dielectric constant of GeO2
| Data(s) |
01/12/2011
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| Identificador | |
| Idioma(s) |
eng |
| Direitos |
info:eu-repo/semantics/restrictedAccess |
| Fonte |
Murad , S , McNeill , D , Mitchell , N , Armstrong , M , Modreanu , M , Hughes , G & Chellappan , R K 2011 , ' Optimisation and scaling of interfacial GeO2 layers for high-k gate stacks on germanium and extraction of dielectric constant of GeO2 ' Paper presented at Intl Semiconductor Device Research Symp , College Park , United States , 07/12/2011 - 09/12/2011 , . |
| Tipo |
conferenceObject |
