Electrical and Optical Characterization of GeON Layers with High-ĸ Gate Stacks on Germanium for Future MOSFETs

Autoria(s): Murad, Shahjahan; Baine, Paul; Montgomery, John; McNeill, David; Mitchell, Neil; Armstrong, Mervyn; Modreanu, Mircea
Data(s)

01/04/2012
Identificador

http://pure.qub.ac.uk/portal/en/publications/electrical-and-optical-characterization-of-geon-layers-with-high-gate-stacks-on-germanium-for-future-mosfets(e13c85ca-0027-471b-b0a9-b8f1e6dcae04).html
Idioma(s)

eng
Direitos

info:eu-repo/semantics/restrictedAccess
Fonte

Murad , S , Baine , P , Montgomery , J , McNeill , D , Mitchell , N , Armstrong , M & Modreanu , M 2012 , ' Electrical and Optical Characterization of GeON Layers with High-ĸ Gate Stacks on Germanium for Future MOSFETs ' ECS Transactions , vol 45 , no. 3 , pp. 137-144 .
Tipo

article
Acesso ao item digital