Insights into Gate-Underlap Design in Double Gate based 6-T SRAM Cell for Low Voltage Applications

Autoria(s): Rashmi, R; Kranti, Abhinav; Armstrong, Alastair
Data(s)

01/10/2008
Identificador

http://pure.qub.ac.uk/portal/en/publications/insights-into-gateunderlap-design-in-double-gate-based-6t-sram-cell-for-low-voltage-applications(60a5b20e-2721-457e-b164-1cd38bfcae3e).html
Idioma(s)

eng
Direitos

info:eu-repo/semantics/restrictedAccess
Fonte

Rashmi , R , Kranti , A & Armstrong , A 2008 , ' Insights into Gate-Underlap Design in Double Gate based 6-T SRAM Cell for Low Voltage Applications ' Paper presented at IEEE International SOI Conference , New Platz, Ny , United States , 01/10/2008 - 01/10/2008 , pp. 61-62 .
Tipo

conferenceObject
Acesso ao item digital