Effect of temperature and inhomogeneity on the yield of PtSi-n-Si photodetectors

Autoria(s): Sellai, A.; Dawson, Paul
Data(s)

01/07/2006
Identificador

http://pure.qub.ac.uk/portal/en/publications/effect-of-temperature-and-inhomogeneity-on-the-yield-of-ptsinsi-photodetectors(66afbcfb-dcfe-404b-acab-a248a9ed6a4e).html

http://dx.doi.org/10.1016/j.jcrysgro.2005.12.029
Idioma(s)

eng
Direitos

info:eu-repo/semantics/restrictedAccess
Fonte

Sellai , A & Dawson , P 2006 , ' Effect of temperature and inhomogeneity on the yield of PtSi-n-Si photodetectors ' Paper presented at 3rd International Conference on Materials for Advanced Technologies/9th International Conference on Advanced Materials , Singapore , Singapore , 01/07/2006 - 01/07/2006 , pp. 166-170 . DOI: 10.1016/j.jcrysgro.2005.12.029
Tipo

conferenceObject
Acesso ao item digital