Dopant transport in tungsten silicide layers for application in SOI technology

Autoria(s): Liao, S.; Bain, Michael; Baine, Paul; Montgomery, John; McNeill, David; Armstrong, Mervyn; Gamble, Harold
Data(s)

01/12/2009
Identificador

http://pure.qub.ac.uk/portal/en/publications/dopant-transport-in-tungsten-silicide-layers-for-application-in-soi-technology(64993062-df71-4896-b173-bc5d53d10255).html
Idioma(s)

eng
Direitos

info:eu-repo/semantics/restrictedAccess
Fonte

Liao , S , Bain , M , Baine , P , Montgomery , J , McNeill , D , Armstrong , M & Gamble , H 2009 , ' Dopant transport in tungsten silicide layers for application in SOI technology ' Paper presented at Materials Ireland Conference , Cork , Ireland , 01/12/2009 - 01/12/2009 , pp. 0-0 .
Tipo

conferenceObject
Acesso ao item digital