Low temperature epitaxy of Si/Si1-xGex/Si multi-layers by low pressure RTCVD for very thin SOI applications

Autoria(s): McNeill, David; Gay, D.L.; Li, X.; Armstrong, Mervyn; Gamble, Harold
Data(s)

01/04/1998
Identificador

http://pure.qub.ac.uk/portal/en/publications/low-temperature-epitaxy-of-sisi1xgexsi-multilayers-by-low-pressure-rtcvd-for-very-thin-soi-applications(6b799678-12b1-4e77-909f-a5670028a50b).html
Idioma(s)

eng
Direitos

info:eu-repo/semantics/restrictedAccess
Fonte

McNeill , D , Gay , D L , Li , X , Armstrong , M & Gamble , H 1998 , ' Low temperature epitaxy of Si/Si1-xGex/Si multi-layers by low pressure RTCVD for very thin SOI applications ' Paper presented at MRS Symposium Proceedings , San Francisco , United States , 01/04/1998 - 01/04/1998 , pp. 307-313 .
Tipo

conferenceObject
Acesso ao item digital