Effect of nitridation on Al/HfO2/Ge MIS capacitors

Autoria(s): Kailath, B.J.; Bhattacharya, Sekhar; DasGupta, A.; DasGupta, N.; McNeill, David; Gamble, Harold
Data(s)

01/12/2007
Identificador

http://pure.qub.ac.uk/portal/en/publications/effect-of-nitridation-on-alhfo2ge-mis-capacitors(176ef0d4-e157-4642-ac40-fd826cb26b11).html

http://www.scopus.com/inward/record.url?scp=49749129260&partnerID=8YFLogxK
Idioma(s)

eng
Direitos

info:eu-repo/semantics/restrictedAccess
Fonte

Kailath , B J , Bhattacharya , S , DasGupta , A , DasGupta , N , McNeill , D & Gamble , H 2007 , ' Effect of nitridation on Al/HfO2/Ge MIS capacitors ' Paper presented at Proceedings of 14th International Workshop on the Physics of Semiconductor Devices , Mumbai , India , 01/12/2007 - 01/12/2007 , pp. 194-197 .
Tipo

conferenceObject
Acesso ao item digital