Growth of wide band gap polycrystalline semi-insulating polycrystalline silicon

Autoria(s): Sands, D.; Brunson, K.M.; Spink, D.M.; Thomas, C.B.; McNeill, David; McDonald, A.A.; Jennings, S.; Rosser, P.J.
Data(s)

01/02/1990
Identificador

http://pure.qub.ac.uk/portal/en/publications/growth-of-wide-band-gap-polycrystalline-semiinsulating-polycrystalline-silicon(694f081d-a12d-42c3-b305-0b82cfa4d340).html
Idioma(s)

eng
Direitos

info:eu-repo/semantics/restrictedAccess
Fonte

Sands , D , Brunson , K M , Spink , D M , Thomas , C B , McNeill , D , McDonald , A A , Jennings , S & Rosser , P J 1990 , ' Growth of wide band gap polycrystalline semi-insulating polycrystalline silicon ' Journal of Vacuum Science & Technology B (microelectronics Processing & Phenomena) , vol 8(1) , pp. 16-20 .
Tipo

article
Acesso ao item digital