An investigation into the performance of diffusion barrier materials against copper diffusion using metal-oxide-semiconductor (MOS) capacitor structures

Autoria(s): Len, V.S.C.; Hurley, Richard; McCusker, N.; McNeill, David; Armstrong, Mervyn; Gamble, Harold
Data(s)

01/06/1999
Identificador

http://pure.qub.ac.uk/portal/en/publications/an-investigation-into-the-performance-of-diffusion-barrier-materials-against-copper-diffusion-using-metaloxidesemiconductor-mos-capacitor-structures(e9ac373b-63ae-4fb5-8bab-0cd1504d810e).html
Idioma(s)

eng
Direitos

info:eu-repo/semantics/restrictedAccess
Fonte

Len , V S C , Hurley , R , McCusker , N , McNeill , D , Armstrong , M & Gamble , H 1999 , ' An investigation into the performance of diffusion barrier materials against copper diffusion using metal-oxide-semiconductor (MOS) capacitor structures ' Solid State Electronics , vol 43(6) , pp. 1045-1049 .
Tipo

article
Acesso ao item digital